APL
Ultrathin films of LaNiO3 (below 8 monolayers) display a metal-insulator transition at a thickness dependent characteristic temperature. This metal-insulator transition was found to be tunable by up to 24 K using an applied electric field as shown in the figure.
R. Scherwitzl et al., Applied Physics Letters 95, 222114 (2009).
See also research topics on Nickelates
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APL
Vertical (left) and lateral (right) piezoresponse force microscopy images of 180° ferroelectric domains in a Pb(Zr0.2,Ti0.8)O3 thin film, showing a local lateral shear reponse at the position of domain walls. Locally lower symmetry at domain walls results in an effective non-zero d35 piezoelectric tensor element, thus allowing for a shear response to a perpendicular electric field at domain walls (bottom sketch).
J. Guyonnet et al., Applied Physics Letters 95, 132902 (2009).
See also research topics on Nanoscale ferroelectrics
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APL
Sheet resistance vs temperature for different magnetic fields applied (a) perpendicular and (b) parallel to the LaAlO3/SrTiO3 interface revealing a large anisotropy. Analyses of these data yield an estimate of about 10nm for the superconducting layer thickness.
N. Reyren et al., Applied Physics Letters 94, 112506 (2009).
See also research topics on Interface engineering
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